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| semitrans ? 3 igbt4 modules skm 300gb12t4 target data features ! " # $ % & $ $ " ' ( ) * + , " - . / / - . typical applications remarks $ / 0 1 2 3 ( & 4 5 6 0 2 5 3 & / $ $ $ / 7 8 0 2 5 3 gb absolute maximum ratings 1 2 3 & $ / symbol conditions values units igbt , 7 1 2 3 0 1 5 5 7 0 : 2 3 1 2 3 1 5 - ; 5 3 < 1 2 - = + = + < ( ) * + > 5 5 - , ? 1 5 ' 5 5 @ 8 0 2 @ , a 0 1 5 5 7 0 2 5 3 0 5 b inverse diode c 7 0 : 2 3 1 2 3 < 2 5 - ; 5 3 1 ' 5 - c = + c = + < ( c ) * + > 5 5 - c , + 0 5 @ 7 0 : 2 3 0 : 1 5 - module = + , 2 5 5 - 7 4 5 6 0 : 2 3 " 4 5 6 0 1 2 3 $ - & 0 5 5 5 characteristics 1 2 3 & $ / symbol conditions min. typ. max. units igbt & 0 1 - 2 2 & ; ' & 2 , 5 & , 7 1 2 3 - 5 7 1 2 3 5 & ; 5 & > 7 0 2 5 3 5 & : 5 & ; 0 2 7 1 2 3 < & 2 < & ; d 7 0 2 5 3 2 & 1 2 & 2 d < 5 5 - & 0 2 7 1 2 3 $ 0 & ; 2 1 & 5 2 7 0 2 5 3 $ 1 & 1 2 1 & 2 0 ; & ' c & + ! e 0 & 1 c 0 c f 4 ; g 6 0 2 0 : 5 5 = 7 1 2 3 1 & 2 h / = d ' 5 5 < 5 5 - < < i / = d 7 0 2 5 3 4 ? 0 2 < < i = 7 4 5 & 0 0 j g k skm 300gb12t4 1 12-07-2007 sch ? by semikron semitrans ? 3 igbt4 modules skm 300gb12t4 target data features ! " # $ % & $ $ " ' ( ) * + , " - . / / - . typical applications remarks $ / 0 1 2 3 ( & 4 5 6 0 2 5 3 & / $ $ $ / 7 8 0 2 5 3 gb characteristics symbol conditions min. typ. max. units inverse diode c c < 5 5 - @ 5 7 1 2 3 $ 1 & 1 1 & 2 7 0 2 5 3 $ 1 & 0 1 & 2 c 5 7 1 2 3 0 & < 0 & 2 7 0 2 5 3 5 & > 0 & 0 c 7 1 2 3 < < & < < d 7 0 2 5 3 & 2 d = = + c < 5 5 - 7 0 2 5 3 - f b 1 1 & 2 i = 7 4 / / 5 & 0 : j g k freewheeling diode c c - @ 7 3 $ c 5 7 3 c 7 3 = = + c - 7 3 - f b i / / j g k module . 0 2 1 5 ! = l 6 l & $ 4 1 2 3 5 & < 2 d 0 1 2 3 5 & 2 d = 4 / $ 5 & 5 1 5 & 5 < ; j g k + m + ' < 2 ) + $ + ' 1 & 2 2 ) < 1 2 " this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 300gb12t4 2 12-07-2007 sch ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 300gb12t4 3 12-07-2007 sch ? by semikron fig. 9 transient thermal impedance of igbt and diode fig. 10 cal diode forward characteristic skm 300gb12t4 4 12-07-2007 sch ? by semikron ul recognized file no. e 63 532 n 2 ' n 2 ' skm 300gb12t4 5 12-07-2007 sch ? by semikron |
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